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CMP TESTER--->CMP 공정 시험기

WAFER POLISHING 공정 시험기 및 EPD DEVICE

첨단기술의 상징 BRUKER사!!!

 

CMP공정 시험기 Model CP-4

 

축소된 CMP MACHINE에 특수 센서기술을 동원하여 CMP Polishing의 최적공정 선정 및 분석 시험기.

CMP 공정의 PAD, SLURRY, DIAMOND Conditioning Disc, Retaining Ring,Wafer Coating의

최적환경 선정및 가공환경 기술 평가용입니다.  

 

CMP MACHINE에서 할 수 없는 실시간 마찰계수/마찰력/마모도/음향측정 등으로 매우 경제적인

EPD 최적화 기술을 모의 시험 할 수 있습니다.

 

세계 CMP관련 유명업체에(IBM/INTEL/Applied Material/Rodel/Cabot/3M......)에서 도입하여

사용중 입니다.           

 

 

 

CMP END POINT DETECTION DEVICE CMP공정의 Cotrol Device

CMP Bench-Top Machine for Materials

Testing and Process Development

 

Published Papers

Application Notes on Materials Testing

Application Notes on Process

Development

Our world-leading expertise in tribo-metrology has just been utilized in the latest product - CMP Tester.

It is based on the latest technological advances and is the most precision and unique instrument of its kind.

This automated instrument is a must for CMP users and suppliers as the means for understanding, optimization and control of CMP processes, machines and materials. CMP Tester description |  PDF file, 280 Kb  

This instrument is essentially a bench-top CMP machine with a number of signals monitored and analyzed in-situ. It includes simultaneous real-time processing of micro-tribological information on the following signals:

 

    normal loads and friction forces (torques) via our proprietary sensors,

    contact acoustic noise (elastic waves) via our proprietary sensors and amplifiers,

    electrical contact resistance and/or capacitance,

    real-time data-acquisition and analysis. 

 

The CMP Tester Diagram  |  PDF file, 2,47 Mb

                                                               

                                        코팅 접착력 및 표면특성/MEMS/스크레치 시험기

                                                                                            Model UMT를 보고 싶은 분은    

 

News Flash

Here you can see the recent CETR presentation of  "Quantitative Functional Testing of Consumables Using a Bench-Top CMP Tester" at the CMPUG Meeting of the Northern California Chapter of American Vacuum Society, September 2001.

 

  The examples of the effective utilization of the CMP Tester are presented below

 

 1. For Materials Testing

     In the documents below one can see the results of  the following tests on the CMP Tester mod. PMT-S:

     - Comparative Functional Tests of Polishing Pads | PDF file, 1 Mb 

     - Functional Properties of Slurries | PDF file, 366 Kb

     - Testing Conditioning Discs | PDF file, 1,22 Mb

     - Friction Tests of Retaining Rings | PDF file, 376 Kb

     - Deformation Test of Polishing Pads | PDF file, 484 Kb

 

 2. For Process Development

 

Optimum polishing conditions were found on the CMP Tester mod. PMT-S for advanced wafers,

with efficient copper polishing without delamination of silicon carbide from low-K material.

 

Samples used

Experimental Sematech wafers with the following structure:Cu on Ta on SiC on Low-K on Silicon

(prepared by Jeffrey T. Wetzel, Program Manager for Low-K Dielectrics and Shin Kook Lee, CMP Program

Manager)

 

Test Procedures and Parameters

Bench-top CMP Tester mod. PMT-S was utilized with simultaneous real-time processing of

micro-tribological information on the following signals:

 - normal load and friction force via proprietary sensors and amplifiers, which allows to measure

dynamic coefficient of friction COF as their ratio;

 - contact high frequency acoustic emission AE via proprietary sensors and amplifiers.

 

Upper specimens:  wafer coupon, sliding laterally by 1?back and forth at 5 mm/sec,4.25?

conditioning disc, being rotated by a polishing pad.

Lower specimens:  polishing pads, rotating at constant speed.  

Polishing slurry: continuous flow.


Observations

Dependencies of coefficient of friction (COF) and acoustic emission signal (AE) at different loads and speeds for Low-K , SiC and Cu top layers are presented in a summary table below.

COF reflected contact conditions (rubbing or floating) and materials being polished (0.40 for low-K, 0.55 for Cu),

AE reflected regimes of material removal (<0.1 for floating,  >1 with peaks for delamination, smooth curves for polishing).

The above data has allowed to determine the optimum CMP conditions, at the highest polishing rate with no delamination, then confirmed by the data presented in the document below. 

Effect of Speed on Copper/Low-K Polishing

Effect of Pressure on Copper/Low-K Polishing

Repeatability of AE data

 

  한미산업 

전화 :  02 - 3411- 0173    팩스 :  02 - 3411 - 0178 

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