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CMP EPD Device

WAFER POLISHINGÀÇ ÃÖÀû°øÁ¤Á¦¾î ½Ã½ºÅÛ, END POINT DETECTION ±â¼ú

 ÃÖ÷´Ü±â¼úÀÇ »ó¡ BRUKER»ç!!!

 

EPD Device(End Point Detection)             Model Pad-Probe

CMP Wafer Polishing °øÁ¤»óÀÇ Tribology Sensing ±â¼ú À» FEB¿¡ Àû¿ëÇÏ¿©, End Point Detection.

(EPD) Control Device¸¦ °³¹ßÇÏ¿© Çõ½ÅÀûÀÎ ¹ÝµµÃ¼ °¡°ø±â¼ú Àû¿ë.

PadÀÇ ¼ö¸íÆò°¡¿Í ÃÖÀû±³Ã¼½Ã±â, Conditioning DiscÀÇ ÃÖÀû»ç¿ë½Ã±â, ÃÖÀû Slurry¼±Á¤°ú WaferÀÇ ½Ç½Ã°£ ÃÖÀû°¡°ø»óÅ ºÐ¼® °¨½Ã °¡´É.

Intel, IBM, TSMC  CMP Process¿¡  EPD device µµÀÔ.

 1. PAD PROBEÀÇ CMP °øÁ¤Áß ÃøÁ¤¿ä¼Ò´Â

    A.PAD Wear(Pad Thickness º¯È­)

    B.PAD Condition(Pad FrctionÀÇ Dyanmic level)

 

 2. PAD PROBEÀÇ ½ÇÁ¦ Áß¿ä¼öÇà±â´É

   A.PadÀÇ ¸¶¸ðµµ¸¦ MonitoringÇÏ¿© ÃÖÀû ±³Ã¼½Ã±â Alarm½Ã±×³Î

   B.Pad¿Í Conditiong DiscÀÇ ¸¶Âû·ÂÃøÁ¤À» ÅëÇÏ¿© ConditioninggÀÇ ÃÖÀûÁ¡ °áÁ¤

   C.Pad¿Í Wafer°£ÀÇ ½Ç½Ã°£ Æú¸®½Ì ¸¶Âû°è¼öÃøÁ¤ÇÏ¿© ÃÖÀû Æú¸®½Ì ¼öÄ¡ °áÁ¤

                                     -»ó°ü°è¼ö·Î WAFERÀÇ RR°ú WIWNU¸¦ ÃÖÀû¹üÀ§ °áÁ¤

  

   ÀÌ¿Í °°Àº ±â´É¿¡ µû¶ó, CMP°øÁ¤¿¡ Ź¿ùÇÑ ¿ø°¡Àý°¨È¿°ú¿Í »ý»ê°øÁ¤¾ÈÁ¤È­ ±â¿©ÇÔ.

 

 CMP °øÁ¤ ÃÖÀûÈ­ ½ÃÇè±â

 

 

 

 ¸¶Âû¸¶¸ðÀ±È° ½ÃÇè±â +  

    ½ºÅ©·¡Ä¡ ½ÃÇè±â 

 

 

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