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EPD Device(End Point Detection) Model Pad-Probe CMP Wafer Polishing °øÁ¤»óÀÇ Tribology Sensing ±â¼ú À» FEB¿¡ Àû¿ëÇÏ¿©, End Point Detection. (EPD) Control Device¸¦ °³¹ßÇÏ¿© Çõ½ÅÀûÀÎ ¹ÝµµÃ¼ °¡°ø±â¼ú Àû¿ë. PadÀÇ ¼ö¸íÆò°¡¿Í ÃÖÀû±³Ã¼½Ã±â, Conditioning DiscÀÇ ÃÖÀû»ç¿ë½Ã±â, ÃÖÀû Slurry¼±Á¤°ú WaferÀÇ ½Ç½Ã°£ ÃÖÀû°¡°ø»óÅ ºÐ¼® °¨½Ã °¡´É. Intel, IBM, TSMC CMP Process¿¡ EPD device µµÀÔ. 1. PAD PROBEÀÇ CMP °øÁ¤Áß ÃøÁ¤¿ä¼Ò´Â A.PAD Wear(Pad Thickness º¯È) B.PAD Condition(Pad FrctionÀÇ Dyanmic level)
2. PAD PROBEÀÇ ½ÇÁ¦ Áß¿ä¼öÇà±â´É A.PadÀÇ ¸¶¸ðµµ¸¦ MonitoringÇÏ¿© ÃÖÀû ±³Ã¼½Ã±â Alarm½Ã±×³Î B.Pad¿Í Conditiong DiscÀÇ ¸¶Âû·ÂÃøÁ¤À» ÅëÇÏ¿© ConditioninggÀÇ ÃÖÀûÁ¡ °áÁ¤ C.Pad¿Í Wafer°£ÀÇ ½Ç½Ã°£ Æú¸®½Ì ¸¶Âû°è¼öÃøÁ¤ÇÏ¿© ÃÖÀû Æú¸®½Ì ¼öÄ¡ °áÁ¤ -»ó°ü°è¼ö·Î WAFERÀÇ RR°ú WIWNU¸¦ ÃÖÀû¹üÀ§ °áÁ¤
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