normal loads and friction forces
(torques) via our proprietary sensors,
contact acoustic noise (elastic waves)
via our proprietary sensors and amplifiers,
electrical contact resistance and/or
capacitance,
real-time data-acquisition and
analysis.
The CMP Tester
Diagram | PDF file, 2,47
Mb
코팅
접착력 및 표면특성/MEMS/스크레치 시험기
Model
UMT를 보고 싶은 분은
News Flash
Here you can see the recent CETR presentation of "Quantitative Functional
Testing of Consumables Using a Bench-Top CMP Tester" at the CMPUG
Meeting of the Northern California Chapter of American
Vacuum Society, September 2001.
The examples of the effective utilization of the CMP Tester are
presented below
1. For
Materials Testing
In the
documents below one can see the results of the following tests on the CMP
Tester mod. PMT-S:
- Comparative
Functional Tests of Polishing Pads | PDF
file, 1 Mb
- Functional
Properties of Slurries | PDF file, 366
Kb
- Testing
Conditioning Discs | PDF
file, 1,22 Mb
- Friction
Tests of Retaining Rings | PDF
file, 376 Kb
- Deformation
Test of Polishing Pads | PDF
file, 484 Kb
2.
For Process Development
Optimum
polishing conditions were found on the CMP Tester mod. PMT-S for advanced
wafers,
with efficient copper polishing without delamination of silicon carbide
from low-K material.
Samples used
Experimental
Sematech wafers with the following structure:Cu on Ta on
SiC on Low-K on Silicon
(prepared by
Jeffrey T. Wetzel, Program Manager for Low-K Dielectrics and Shin Kook Lee,
CMP Program
Manager)
Test
Procedures and Parameters
Bench-top CMP
Tester mod. PMT-S was utilized with simultaneous real-time processing of
micro-tribological information on the following signals:
-
normal load
and friction force via proprietary sensors and amplifiers, which allows to
measure
dynamic coefficient of friction COF as their ratio;
-
contact high
frequency acoustic emission AE via proprietary sensors and
amplifiers.
Upper
specimens: wafer coupon, sliding
laterally by 1?back and forth at 5 mm/sec,4.25?
conditioning disc, being rotated by a
polishing pad.
Lower
specimens: polishing pads, rotating at
constant speed.
Polishing
slurry: continuous flow.
Observations
Dependencies
of coefficient of friction (COF) and acoustic emission signal (AE) at different
loads and speeds for Low-K , SiC and Cu top layers are presented in a summary
table below.
COF reflected
contact conditions (rubbing or floating) and materials being polished (0.40 for
low-K, 0.55 for Cu),
AE reflected
regimes of material removal (<0.1 for floating, >1 with peaks for delamination, smooth
curves for polishing).
The above
data has allowed to determine the optimum CMP conditions, at the highest
polishing rate with no delamination, then confirmed by the data presented in the
document below.
Effect
of Speed on Copper/Low-K Polishing
Effect
of Pressure on Copper/Low-K Polishing
Repeatability
of AE data | 
